Figure 3
From: Low value for the static background dielectric constant in epitaxial PZT thin films
(a) The thickness dependence of the dielectric constant evaluated from C-V measurements performed at 100 kHz. Evaluation was performed in three cases: at 0 V “static”; at 0 V “dynamic”; at maximum applied voltage “dynamic”. (b) TEM images for 20 nm and 150 nm thick samples (inside each image the notations are a-low magnification image cross-section; b-SAED image; c-low magnification HR-TEM image; d-high magnification HR-TEM image of PZT/SRO interface and SRO/STO interfaces; these images demonstrate the high quality of the epitaxial growth).
