Figure 1

SIT driven by the disorder strength V: entanglement \( {\mathcal L} \) (a), average double-occupation probabilities at impurity (\({\bar{w}}_{2}^{V}\)) and non-impurity (\({\bar{w}}_{2}^{V\mathrm{=0}}\)) sites for C = 10% (b) and C = 40% (c), and per-site ground-state energy (d).