Figure 2

SIT driven by the impurities’ concentration C: entanglement \( {\mathcal L} \) (a), average double-occupation probabilities at impurity (\({\bar{w}}_{2}^{V}\)) and non-impurity (\({\bar{w}}_{2}^{V\mathrm{=0}}\)) sites for \(V=-\,t\) (b) and \(V=-\,10t\) (c), and per-site ground-state energy (d).