Figure 4 | Scientific Reports

Figure 4

From: Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Figure 4

Source-drain voltage (VDS) dependence of slopes (−EA/1000kB) extracted from Fig. 3 for (a) back gate voltages, Vg = 0 V, (b) Vg = 10 V and (c) Vg = 20 V. The solid red line is a linear fit to the experimental data to extract the intercept and therefore Schottky barrier height (ϕB). (d) Vg dependence of Schottky barrier height, showing positive value for Vg = 0 V and negative values for Vg = 10 and 20 V.

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