Figure 4 | Scientific Reports

Figure 4

From: The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

Figure 4

The possible O pairs participating vacancy migrations between the inter- and intra-layer O sites. (a) (A-path) & (b) (B-path) are between 2-fold intra-layer and inter-layer, (c–e) (A~E-paths) are between 3-fold intra- and inter-layer O sites. (f–h) give examples of the self-connected pathways combining (f) A- and B-paths, (g) C- and D-paths, and (h) D- and E-paths.

Back to article page