Figure 1
From: The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene
SEM images of AlN on graphene formed via different MEE cycles. (a,d), (b,e) and (c,f) are (top-, bird’s eye-view) SEM images of samples A1, A2 and A3, respectively. Scale bars are 1 μm. Features marked with yellow lines, yellow (orange) contours and yellow dashed outlines are high-density AlN nanostructures grown along line defects of graphene, individual (coalesced) AlN islands and areas of exposed graphene, respectively. Yellow arrows in samples A2 and A3 show the lateral growth of AlN nanostructures that initially nucleate at the line defects of graphene in sample A1.
