Figure 2
From: Hyperuniform disordered waveguides and devices for near infrared silicon photonics
(a) Scanning electron micrograph image of a fabricated SOI HUD network structure with a wall width of 140 nm. (b) Simulated transmission results show that the position and width of the bandgap for the HUDS network with an average lattice spacing of 500 nm is tunable by varying the wall widths.
