Figure 5
From: Amorphous TaxMnyOz Layer as a Diffusion Barrier for Advanced Copper Interconnects
Cross-sectional HR-TEM images of the MOS capacitor sample (a) without the barrier and (b) with the TaxMnyOz barrier. Image (c) shows the intensity profile for the thickness measurement after annealing at 400 °C for 10 h. The HAADF-STEM images and the STEM-EDS line profiles of the MOS capacitor sample are shown (d) without the barrier and (e) with the TaxMnyOz barrier after annealing at 400 °C for 10 h. Image (f) shows the HAADF-STEM image and the STEM-EELS line profile of the MOS capacitor sample with TaxMnyOz barrier after annealing at 400 °C for 10 h.
