Figure 6
From: Amorphous TaxMnyOz Layer as a Diffusion Barrier for Advanced Copper Interconnects
TZDB histogram obtained using 20 J–E curves for the evaluation of Cu diffusion into the SiO2 layer following annealing at 400 °C for 10 h. The MOS capacitor sample without the barrier (a) before and (b) after annealing and with the TaxMnyOz barrier (c) before and (d) after annealing.
