Figure 1
Impurity profiles for H, Si, O, and C from SIMS measurements in GaN samples H3 (a), H202 (b), H1007 (c), and H2057 (d). Bars on the right side indicate detection limits for these impurities.
Figure 1 | Scientific Reports
Impurity profiles for H, Si, O, and C from SIMS measurements in GaN samples H3 (a), H202 (b), H1007 (c), and H2057 (d). Bars on the right side indicate detection limits for these impurities.
