Table 1 Average concentrations of impurities in near-surface (d = 0.1–0.4 µm) and bulk (d = 2–4 µm) regions of GaN from SIMS measurements.

From: Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

Sample

[C] (cm−3)

[O] (cm−3)

[Si] (cm−3)

d = 0.1–0.4 µm

d = 2–4 µm

d = 0.1–0.4 µm

d = 2–4 µm

d = 0.1–0.4 µm

d = 2–4 µm

H3

5.1 × 1016

<2 × 1015

3.1 × 1016

1.6 × 1016

6.8 × 1016

6.5 × 1016

H202

1.3 × 1016

<2 × 1015

3.1 × 1016

<6 × 1015

8.6 × 1016

8.0 × 1016

H1007

8.2 × 1016

1.5 × 1015

1.3 × 1017

<1 × 1016

2.3 × 1016

7.5 × 1016

H2057

<5 × 1015

<5 × 1015

3.5 × 1016

2.1 × 1016

4.8 × 1016

4.5 × 1016

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