Table 2 Absolute IQE of defect-related PL at T = 100 K and the concentration of defects responsible for PL bands in GaN.

Sample	RL1 band		YL1 band (C_N)		UVL band (Mg_Ga)
Sample	η₀	N (cm⁻³)	η₀	N (cm⁻³)	η₀	N (cm⁻³)
H3	0.055	1.5 × 10¹⁵	0.008	3.5 × 10¹⁴	0.00033	8 × 10¹²
H3 (400 nm – etched)	0.048	1.2 × 10¹⁵	0.008	4 × 10¹⁴	0.00032	8 × 10¹²
H202	0.24	4 × 10¹⁵	0.053	7 × 10¹⁴	0.0035	3 × 10¹³
H202 (400 nm – etched)	0.11	2.6 × 10¹⁵	0.031	8 × 10¹⁴	0.0014	2.8 × 10¹³
H1007	0.24	8 × 10¹⁵	0.11	3 × 10¹⁵	0.011	2 × 10¹⁴
H2057	0.09	3 × 10¹⁵	0.14	4 × 10¹⁵	0.006	6 × 10¹²
MD42			0.8	5 × 10¹⁷	0.0003	~10¹⁴

Note that the values for samples H3 and H202 in Table 2 differ from those reported for the same samples in ref. ¹². The main reason is that in the current work PL spectra measured as a function of wavelength λ were multiplied by λ³ to represent PL spectra in units proportional to the number of emitted photons as a function of photon energy (see Methods). As a result of this omission in our publications prior to ref. ⁴, the concentration of defects responsible for the RL1 band was underestimated by a factor of 2 and that for the UVL band was overestimated by a factor of 3 in ref. ¹². In addition, after 2–4 years following the initial analysis of these samples, the PL intensity and spectrum for sample H3 have changed, which explains the remaining difference by up to a factor of 3 between the concentrations for sample H3 reported in ref. ¹² and in the current work.

Quick links

Search