Table 1 Salient Features of different LIM techniques proposed in literature.
From: SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
Ref | Building Block | Logic | Salient Features |
---|---|---|---|
BRSa and CRSb cells | Non-Statefulc V-R logic (sequential logic) | 14 out of 16 Boolean function realized in maximum 3 cycles, retains logic output, destructive read operation | |
1 BRS | Non-Stateful V-R logic (sequential logic) | all 16 Boolean function realized in maximum 3 cycles, retains logic output, needs rectifying behavior | |
1 CRS | Non-Stateful V-R logic (sequential logic) | all 16 Boolean function realized in maximum 3 cycles, retains logic output, needs rectifying behavior | |
2 BRS (connected anti-serially) | Non-Stateful V-R logic (sequential logic) | all 16 Boolean function realized in max. 3 cycles, retains logic output | |
3 BRS | Statefuld R-R Logic | 5 basic Boolean functions can be realized in 2 cycles, retains input variables and logic output | |
1T-1R | Non-Stateful V-R logic (sequential logic) | all 16 Boolean function realized in 2 cycles (+1 read cycle), retains input variables and logic output | |
3 BRS + passive resistor | Stateful R-R Logic | NAND, AND and other logics can be realized using different number of BRS devices or cascading, retains both input variables and logic output | |
3 BRS + passive resistor | Stateful R-R Logic | Boolean function except XOR and XNOR in 1 cycle, retains input variables and output | |
1R (4 resistance states) + passive resistor | Stateful R-R Logic | all 16 Boolean operations are realized, retains logic output | |
This Work | 2T-1R or 1T-1R (R:4 resistance states) | Non-Stateful V-R logic | 5 basic Boolean functions in 1 cycle, retains initial Memory state and logic output (not storing input variables) |