Figure 3
From: SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Morphology of S2 film 800 °C RTA for 10 min: (a) low magnification XTEM image showing three zones with different morphology; (b) HRTEM image of zone III at the interface with the substrate, showing the SiGe NCs embedded in the SiO2 matrix. The big SiGe NCs (over 30 nm) are facetted and contain nanotwins and stacking faults defects.
