Figure 7
From: SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
J-V characteristics obtained in dark and under illumination with an incandescent lamp on S1 (25%Si25%Ge:50%SiO2) film annealed at (a) 700 °C, (b) 800 °C and (c) 1000 °C and on S2 (5%Si45%Ge:50%SiO2) film annealed at (d) 800 °C. (e) Schematic representation of the investigated structures and measurement setup.
