Table 2 Comparison of various key parameters of the fabricated SBDs.

From: Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Device

(RR)

I0 (A)

n

ΦB (eV)

Rs (kΩ)

Rsh (MΩ)

Ag/F8/P3HT/ITO

7.42

6.23 × 10−10

4.03

1.09

269

46.2

Ag/F8-CdSe QDs/P3HT/ITO

142

2.39 × 10−11

2.38

1.17

78.2

295

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