Table 4 Overall comparison of the parameters extracted from different methods.

From: Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots

Characterization Method

Device

(n)

Rs (kΩ)

ΦB (eV)

Conventional I–V

Ag/F8/P3HT/ITO

4.03

269

1.03

 

Ag/F8-CdSe/P3HT/ITO

2.38

78.2

1.17

Cheung Function

Ag/F8/P3HT/ITO

4.26

310

1.11

 

Ag/F8-CdSe/P3HT/ITO

2.42

89

1.20

Norde’s Function

Ag/F8/P3HT/ITO

—

301

1.10

 

Ag/F8-CdSe/P3HT/ITO

—

90

1.22

Back to article page