Figure 6
From: Quantum valley Hall effect in wide-gap semiconductor SiC monolayer
Topological phase transition and robustness of gapless edge states. (a–c) DFT calculations for SiC monolayer. (a) Band gap as a function of ΔV. (b) Band structure of H-terminated 32-ZNR when ΔV = 2.5 eV. (c) Band structure of H-terminated 64-ZNR with a kink-type domain wall whose edges consist of silicon when ΔV = 2.5 eV. (d–f) TB calculations for 20-ZNR with ΔeA = −ΔeB = Δ = 0.5 using a periodic supercell composed of 80 cells. Edge state bands within the bulk gap (d) when Vp = 1 and Vw = 1, (e) when Vp = 1 and Vw = 5, and (f) when Vp = 4 and Vw = 5. In (d), the small gaps indicated by arrows are a signature of backscattering.
