Figure 3
From: Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
Cross-section and plan-view images of GaN nanohole arrays for (a) 1.5 µm pitch after 1 h SATE (~2.35 µm etch depth) and (b) 500 nm pitch after 2 h SATE (~2.4 µm etch depth). Inset are high magnification SEM images.
