Figure 4
From: Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
(a,d) Plan view, (b,e) 45° tilt and (c,f) cross-section SEM images of \((11\bar{2}2)\) semi-polar GaN nanoholes after 30 (upper row) and 60 min (lower row) SATE. Inset are high magnification plan view SEM images. The color code employed to identify the facets highlighted in b and c is the same as the one employed in Fig. 5b.
