Table 1 Thermal etching conditions and nanohole characteristics for the experiments presented in Fig. 1.
From: Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
Fig. nb | Temperature (°C) | Pressure (mbars) | NH3 flow rate (sccm) | H2:N2 carrier gas (L) | c-plane etch depth ± 50 nm (nm) | Uniformity of the GaN opening | Non-polar faceted sidewalls |
|---|---|---|---|---|---|---|---|
1.a | 900 | 100 | 10 | 3.2: 0.8 | 550 | no | no |
1.b | 950 | 100 | 10 | 4: 0 | 3000 | no | yes |
1.c | 950 | 400 | 10 | 3.2: 0.8 | 2300 | no | yes |
1.d | 950 | 100 | 0 | 3.2: 0.8 | 3000–3500 | yes | no |
1.e | 950 | 100 | 10 | 3.2: 0.8 | 2100 | no | yes |
1.f | 950 | 100 | 4000 | 3.2: 0.8 | 700 | no | no |
1.g | 950 | 20 | 10 | 3.2: 0.8 | 500 | yes | no |
1.h | 950 | 100 | 10 | 0: 4 | 150 | no | no |
1.i | 1000 | 100 | 10 | 3.2: 0.8 | 5900 | yes | yes |
2 | 975 | 50 | 10 | 4: 0 | 2300 | yes | yes |
