Figure 2
From: State dependence and temporal evolution of resistance in projected phase change memory
Projected antimony line-cell (a) Sketch of the device geometry in top and cross-sectional view; dimensions given in nanometers. HSQ: hydrogen silsesquioxane. (b) STEM and EDX analysis of the active region cross section along the axis marked in a. Top and Bottom panels show an EDX-map for antimony (green) and the metal nitride (orange). These images are used to get an estimate of the line width. The central panel is a bright field STEM image.
