Table 1 Material parameters used in the device model study (Fig. 1): Rs denotes the material sheet resistances. In this table, the contact resistance to the electrodes is assumed to be zero to study only the effect of the interface resistance between phase change material and projection layer.
From: State dependence and temporal evolution of resistance in projected phase change memory
Rs,cryst [kΩ/sq] | 20 |
Rs,amo [kΩ/sq] | 5000 |
Rs,proj [kΩ/sq] | 500 |
Rele—PCM [Ω] | 0 |
Rele—proj [Ω] | 0 |
vR | 0.1 |
Lline [nm] | 100 |
w [nm] (line width) | 50 |
