Table 2 Experimentally obtained model input parameters: The table summarizes the material sheet resistances in kΩ/sq and contact resistances to the W electrode in kΩ at an ambient temperature of 200 K.

From: State dependence and temporal evolution of resistance in projected phase change memory

Rs,proj [kΩ/sq]

21.8

Rs,cryst − Sb [kΩ/sq]

1.26

Rs,amo − Sb [kΩ/sq]

410 ± 60

RW−Sb [kΩ]

1.6

RW−proj [kΩ]

78 to 202

  1. The sheet resistance of the amorphous state corresponds to the melt-quenched state one second after device RESET. The contact resistance W to projection material was measured on macroscopic reference structures and extrapolated to the nanoscopic contact area in the device. Accordingly, RW−proj is estimated with lower and upper bounds of 78 kΩ and 202 kΩ, respectively. The errors on the other parameters are negligible, and thus excluded in the analysis. Details on the experimental procedure to obtain these parameters are summarized in Supplementary Note 4. The material parameters summarized here are used to fit the experimentally obtained data to the device model (Fig. 3).
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