Figure 5
From: Continuously-tunable light–matter coupling in optical microcavities with 2D semiconductors
(a) Relationship between the change in the cavity length Δz and the resonant angle ϑres for different spacer layer’s thicknesses dPMMA for the structure in Fig. 1b. (b) Corresponding influence of Δz on the relative field strength at the excitons’ position ψex for ϑres. The reflectivity of WS2 is in those two calculations (a,b) considered, while its absorption is neglected. (c) Resulting resolvable splitting ħΩRabi at ϑres obtained by a varied Δz combined with a resonance adjustment by the angle of incidence ϑ. The splitting is determined by the difference between the maxima of two Lorentzian peaks approximating the coupled modes fitted to the calculated reflectivity spectra at Ecav (ϑres) − Eex = 0.
