Figure 6 | Scientific Reports

Figure 6

From: Single-step fabrication and work function engineering of Langmuir-Blodgett assembled few-layer graphene films with Li and Au salts

Figure 6

(a) Schematic cross-section of the bottom-contacted back-gated FET devices, also indicating electrical connections. (b) Optical microscopy image of one of the devices, without PDMS capping (for clarity). LBA GS film covers the entire sample surface. (c,d) Output curves of H(AuCl4) and LiNO3 doped samples, and (e,f) transfer curves of H(AuCl4) and LiNO3 doped samples, respectively. Dashed lines represent least squares linear fits (to selected regions) that were used to extract sheet resistance and linear mobility.

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