Figure 7 | Scientific Reports

Figure 7

From: Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Figure 7

μn(T) measured from Hall-effect analysis for samples with various tS under decreasing T (▽) and then increasing T (▲) measurements. The inset enlarges the corresponding values near room temperature. The magnitude of the error-bar estimated from the measurement is less than the size of the symbol.

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