Table 1 Associated parameters for evaluating EDD – EF at each Si-δ-doping layer and ΔV across tS for samples with various tS at 300 K.

From: Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

tS (nm)

n2D/2 (1012 cm−2)

nSD/2 (1012 cm−2)

nDD/2 (1012 cm−2)

f(EDD)

EDD—EF (meV)

F (104 V/cm)

ΔV (mV)

5

0.631 ± 0.001

0.42 ± 0.02

0.21 ± 0.02

78.4 ± 1.6%

− 33 ± 2

9.32 ± 0.01

47

10

0.559 ± 0.005

0.42 ± 0.02

0.14 ± 0.02

85.6 ± 2.7%

− 45 ± 6

8.27 ± 0.07

83

15

0.548 ± 0.001

0.42 ± 0.02

0.12 ± 0.02

87.6 ± 2.7%

− 50 ± 6

8.09 ± 0.01

121

  1. The total sheet concentration of Si atoms from dual δ-doping layers was fixed at (2.80 ± 0.14) × 1012 cm−2.
  2. Note that n2D was taken from Hall-effect analysis (see Fig. 4), nSD was taken from SIMS analysis and estimated by information based on Ref.25, and nDD = n2D − nSD.
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