Figure 3 | Scientific Reports

Figure 3

From: Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices

Figure 3

The ratio \({f_n}/{f_{\tau }}\) is plotted as a function of the number of transport electrons inside a transistor. With a red solid line we plot Eq. (17) and with a brown dashed line when the ratio \({f_n}/{f_{\tau }}\) is equal to one. Points corresponding to commercial transistors, laboratory transistor prototypes and the devices that will be simulated in next section (whose details are given in Table 1) are plotted with symbols. We see how the \({f_n}/{f_{\tau }}\) ratio is lower than one for many of these transistors, indicating that the noise limit is relevant nowadays.

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