Figure 3
From: Broadband optical ultrafast reflectivity of Si, Ge and GaAs
Time evolution of \(\Delta R/R\) for Si (left panel), Ge (center panel) and GaAs (right-hand panel). Probe wavelength are 450 nm, 550 nm and 650 nm for Si and GaAs, while for Ge \(E_1\) and \(E_1+\Delta \) transitions wavelength instead of 550 nm. Pump fluences were 16 mJ/\(\hbox {cm}^2\), 16 mJ/\(\hbox {cm}^2\) and 6.4 mJ/\(\hbox {cm}^2\) for Si, Ge and GaAs respectively.
