Figure 2 | Scientific Reports

Figure 2

From: Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Figure 2

(S, W) values measured at E = 4 keV using coincidence system (brown symbols). (S, W) for unimplanted GaN is also shown (denoted as defect-free; “DF”). Calculated (S, W) for positron annihilation in delocalized state, DF, VGa, VGa(VN)n, (VGaVN)m, and complexes between vacancies and H [HGa, (H3)Ga, (HGaHN)3, and (VGaHN)4] are also shown (blue symbols), where notation “(Hn)Ga” corresponds to VGa containing H atoms, and n is number of H atoms in VGa. Brown line connects (S, W) values for unimplanted sample and samples annealed above 1000 °C.

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