Figure 5
Temperature dependent electronic depth profile of \(\hbox {Ti}^{3+}\) as obtained from the RXR-analysis. In contrast to Fig. 4, the bars represent the site occupation and the bars for different species are plotted on top of each other in the vertical direction so that they add up to the total site occupation in a given layer. For the \(\hbox {Ti}^{3+}\), the site occupation corresponds to the average occupation of the of the Ti 3d-orbitals. The appearance of \(\hbox {Ti}^{3+}\) in the LAO-layer indicates a small level of Al-Ti interdiffusion and/or the presence of TiO\(_2\)-terraces in a nominal AlO\(_2\)-layer. At low temperatures, a pronounced bimodal depth profile appears.
