Figure 4
Simulated synthetic PACBED patterns of Si [010] with 42 nm thickness (200 kV) (a) neglecting (left) and including plasmon excitations (right). The two components of the latter one, i.e. plasmon-loss part and zero-loss part, are shown as quadrants in (b) and their ratio as another one. The simulated differential intensities for the 85 nm thick data set (300 kV) are collected in (c) (Black: unfiltered; blue: zero loss; red: plasmon loss). The plasmon-loss/zero-loss ratios and the corresponding normalized ratios for different thicknesses are depicted in (d) and (e), respectively (Solid lines: 300 kV; dashed lines: 200 kV). The corresponding experimental curves for a thickness of 85 nm are shown again for comparison reasons as dotted lines in (d) and (e).
