Table 1 Parameters of sample preparations. \(p_H/p\) lists the ratio of the applied partial pressure (\(p_H\)) to the total plasma pressure (\(p=3\times 10^{-3}\) mbar), \(P_{0,Si}\) and \(P_{0,Ge}\) are the maximum sputtering power.

From: Micro-combinatorial sampling of the optical properties of hydrogenated amorphous \(\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}\) for the entire range of compositions towards a database for optoelectronics

Sample

\(p_H/p\)

\(P_{Si}^0\) (W)

\(P_{Ge}^0\) (W)

d (Si,Ge) (nm)

n (Si,Ge) @ 633 nm

A

0.00

310

86

(\(101.58 \pm 0.13,\) \(106.87 \pm 0.15\))

(4.69, 5.11)

B

0.05

310

86

(\(124.17 \pm 0.11,\) \(141.10 \pm 0.15\))

(4.70, 5.07)

C

0.10

310

86

(\(104.75 \pm 0.16,\) \(104.52 \pm 0.13\))

(4.34, 4.99)

D

0.20

310

86

(\(100.01 \pm 0.07,\) \(101.50 \pm 0.15\))

(4.16, 5.01)

  1. d and n denote the layer thickness and the refractive index at the wavelength of 633 nm on the Si-rich and Ge-rich sides of the wafer calculated using the best optical model described in section “Parameterization of the dielectric function”. The sputtering rate was 0.4 nm/s in each case.
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