Figure 7
From: Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy

AFM images and pinhole statistics of Al/Al2O3 with substrate O2 prebake pressure of: (a) without O2 prebake, (b) 20 mTorr, and (c) 20 mTorr with Modified Cleaning Procedure (MCP) Statistics are surveyed over three different AFM images i.e. 75 μm2 for each sample, and data with pit depth less than 5 nm are treated as false positives and subsequently trimmed.