Figure 1
From: An innovative technique for electronic transport model of group-III nitrides

Full electronic band structure of Al0.2Ga0.8N at 300Â K simulated by empirical pseudopotential method using virtual crystal approximation.
From: An innovative technique for electronic transport model of group-III nitrides
Full electronic band structure of Al0.2Ga0.8N at 300Â K simulated by empirical pseudopotential method using virtual crystal approximation.