Figure 6

(a) AlN alloy Carrier drift velocity with respect to electric field (E) with separate scattering mechanisms and doping density 1022 m⁻³ at 300 K. (b) GaN alloy Carrier drift velocity with respect to electric field (E) with separate scattering mechanisms and doping density 1022 m⁻³ at 300 K. (c) InN alloy Carrier drift velocity with respect to electric field (E) with separate scattering mechanisms and doping density 1022 at 300 K. (d) Al0.2Ga0.8N alloy Carrier drift velocity with respect to Electric Field (E) with separate scattering mechanisms and doping density 1022 m⁻³ at 300 K. (e) In0.2Ga0.8N alloy Carrier drift velocity with respect to Electric Field (E) with separate scattering mechanisms and doping density 1022 m⁻³ at 300 K. (f) In0.2Al0.8N alloy Carrier drift velocity with respect to Electric Field (E) with separate scattering mechanisms and doping density 1022 m⁻³ at 300 K.