Table 2 Optimum alloy disorder parameters used in current study and interpolated lattice constant of ternary nitrides for x = 0.2.

From: An innovative technique for electronic transport model of group-III nitrides

Material

Al0.2Ga0.8N

In0.2Ga0.8N

In0.2Al0.8N

Alloy disorder (P)

0.02532

0.02232

0.02532

Simulated Lattice Constant (Å)

3.169

3.256

3.193

  1. The lattice constant has been simulated using the formula9 \(\mathrm{a}\left(\mathrm{ABN}\right)=\mathrm{x}\cdot \mathrm{a}\left(\mathrm{AN}\right)+\left(1-\mathrm{x}\right)\cdot \mathrm{a}\left(\mathrm{BN}\right)+\mathrm{P}\cdot {[\mathrm{x}\cdot \left(1-\mathrm{x}\right)]}^{1/2}\).
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