Table 4 Material parameters used for mole fraction x = 0.2 in our Monte Carlo simulation.
From: An innovative technique for electronic transport model of group-III nitrides
Parameters | GaN | AlN | InN | Al0.2Ga0.8N | In0.2Ga0.8N | In0.2Al0.8N |
---|---|---|---|---|---|---|
M (kg/m3) | 6087 | 3230 | 6240 | 5515.6 | 6117.6 | 3832 |
vs (m/s) | 7619 | 9060 | 3780 | 7907 | 6851.2 | 8004 |
Da (eV) | 8.3 | 6.2 | 4.76 | 7.88 | 7.05 | 5.37 |
\({\varepsilon }_{s}\) | 9.7 | 8.5 | 15.3 | 9.46 | 10.82 | 9.86 |
\({\varepsilon }_{\infty }\) | 5.28 | 4.77 | 8.4 | 5.18 | 5.904 | 5.496 |
\({m}_{\Gamma }\) | 0.2 | 0.48 | 0.04 | 0.256 | 0.168 | 0.392 |
\({m}_{\mathrm{U}}\) | 0.4 | 1 | 0.25 | 0.52 | 0.53 | 0.85 |
\({\mathrm{m}}_{{\Gamma }_{3}}\) | 0.6 | 1 | 1 | 0.68 | 0.52 | 1 |
\(U-\Gamma\)(eV) | 1.34 | 0.7 | 2.71 | 1.21 | 1.614 | 1.01 |
\({\Gamma }_{3}-\Gamma\)(eV) | 2.14 | 1.0 | 1.78 | 1.91 | 2.068 | 1.156 |
Equivalent valleys | ||||||
\(\Gamma\) | 1 | |||||
U | 6 | |||||
\({\Gamma }_{3}\) | 1 | |||||
\({\hslash \omega }_{LO}\)(meV) | 0.091 | 0.099 | 0.073 | 0.093 | 0.087 | 0.094 |
\({D}_{ij}\)(eV m-1) | 1011 | |||||
\({\hslash \omega }_{ij}\)(meV) | 0.073 | 0.099 | 0.029 | 0.078 | 0.06 | 0.085 |
\(\alpha\)(eV-1) Nonparaboli-city | ||||||
\(\Gamma\) | 0.19 | 0.04 | 1.32 | 1.16 | 0.42 | 0.299 |
U | 0.03 | 0 | 0.23 | 0.06 | 0.07 | 0.046 |
\({\Gamma }_{3}\) | 0.08 | 0 | 0 | 0.023 | 0.061 | 0.0 |
\({P}_{z}\)(C/m2) | 0.38 | 0.92 | 0.38 | 0.48 | 0.38 | 0.811 |