Table 4 Material parameters used for mole fraction x = 0.2 in our Monte Carlo simulation.

From: An innovative technique for electronic transport model of group-III nitrides

Parameters

GaN

AlN

InN

Al0.2Ga0.8N

In0.2Ga0.8N

In0.2Al0.8N

M (kg/m3)

6087

3230

6240

5515.6

6117.6

3832

vs (m/s)

7619

9060

3780

7907

6851.2

8004

Da (eV)

8.3

6.2

4.76

7.88

7.05

5.37

\({\varepsilon }_{s}\)

9.7

8.5

15.3

9.46

10.82

9.86

\({\varepsilon }_{\infty }\)

5.28

4.77

8.4

5.18

5.904

5.496

\({m}_{\Gamma }\)

0.2

0.48

0.04

0.256

0.168

0.392

\({m}_{\mathrm{U}}\)

0.4

1

0.25

0.52

0.53

0.85

\({\mathrm{m}}_{{\Gamma }_{3}}\)

0.6

1

1

0.68

0.52

1

\(U-\Gamma\)(eV)

1.34

0.7

2.71

1.21

1.614

1.01

\({\Gamma }_{3}-\Gamma\)(eV)

2.14

1.0

1.78

1.91

2.068

1.156

Equivalent valleys

 \(\Gamma\)

1

 U

6

 \({\Gamma }_{3}\)

1

\({\hslash \omega }_{LO}\)(meV)

0.091

0.099

0.073

0.093

0.087

0.094

\({D}_{ij}\)(eV m-1)

1011

\({\hslash \omega }_{ij}\)(meV)

0.073

0.099

0.029

0.078

0.06

0.085

\(\alpha\)(eV-1) Nonparaboli-city

 \(\Gamma\)

0.19

0.04

1.32

1.16

0.42

0.299

 U

0.03

0

0.23

0.06

0.07

0.046

 \({\Gamma }_{3}\)

0.08

0

0

0.023

0.061

0.0

\({P}_{z}\)(C/m2)

0.38

0.92

0.38

0.48

0.38

0.811

  1. M: mass density \({v}_{s}\): Sound velocity, \({D}_{a}\): acoustic deformation potential, ɛs: static dielectric constant, \({\varepsilon }_{\infty }\): High Frequency dielectric constant, \({D}_{ij}\): Intervalley Deformation Potentials, \(\alpha\): non-parabolicity factor and \({P}_{z}\): piezoelectric constant are taken from reference10,11.
  2. mɼ: Effective mass at Γ valley, mU: Effective mass at U valley, mɼ3: Effective mass at \({\Gamma }_{3}\) valley, \(U-\Gamma , {\Gamma }_{3}-\Gamma\) are valley separation, \({\hslash \omega }_{LO}\): Optical Phonon energies, \({\hslash \omega }_{ij}\): Intervalley Phonon Energies are extracted from the E–k data obtained through FullBand simulator.