Table 5 The comparison of ‘peak electron drift velocities vd(sat) occurring at certain applied electric field.

From: An innovative technique for electronic transport model of group-III nitrides

Material

Without Ps

With Piezoelectric Scattering (Ps)

Nd = 1022 m−3

Nd = 1021 m−3

Nd = 1022 m−3

Nd = 1023 m−3

vd(sat)

\(\varepsilon\)

vd(sat)

\(\varepsilon\)

vd(sat)

\(\varepsilon\)

vd(sat)

\(\varepsilon\)

GaN

338,241.76

240

332,702.11

260

336,347.62

240

335,330.14

240

AlN

175,340.32

420

165,126.54

480

165,357.21

480

164,567.43

500

InN

495,755.11

40

468,867.88

60

468,405.97

60

467,559.28

60

Al0.2Ga0.8N

305,409.52

300

300,118.99

320

300,042.37

320

300,383.95

320

Al0.4Ga0.6N

282,982.04

360

277,402.67

360

276,870.74

360

276,513.34

380

In0.2Ga0.8N

328,157.22

220

323,701.12

220

323,543.69

220

322,908.79

240

In0.4Ga0.6N

332,536.42

180

326,761.45

180

326,562.54

200

325,739.35

200

In0.2Al0.8N

228,558.30

540

219,712.81

580

219,936.09

580

217,867.01

540

In0.4Al0.6N

230,890.69

440

221,966.17

480

221,816.73

480

221,207.67

460

  1. \(\varepsilon\)’ for various doping densities at room temperature 300 K under piezoelectric scattering mechanism off and on. The ratio of vd(sat) to \(\varepsilon\) gives the mobility.