Table 6 The mobility data of nitride alloys with variation of doping density at different temperatures.

From: An innovative technique for electronic transport model of group-III nitrides

Materials

Nd

\({\mu }_{300}\)

\({\mu }_{450}\)

\({\mu }_{600}\)

GaN

1021

1279.62

1093.64

1011.16

1022

1401.45

1185.04

1011.88

1023

1397.21

1188.30

1008.36

AlN

1021

344.01

262.24

223.01

1022

344.49

282.75

225.32

1023

329.13

269.66

239.40

InN

1021

7814.46

6952.23

6123.57

1022

7806.77

6960.48

6115.73

1023

7792.65

6941.83

6096.48

Al0.2Ga0.8N

1021

937.87

815.39

705.12

1022

937.63

864.19

705.67

1023

938.70

812.89

702.72

Al0.4Ga0.6N

1021

770.56

639.59

530.68

1022

769.08

602.41

556.00

1023

727.67

638.49

529.72

In0.2Ga0.8N

1021

1471.37

1236.37

1035.57

1022

1470.65

1136.97

1034.46

1023

1345.45

1223.68

1033.84

In0.4Ga0.6N

1021

1815.34

1485.20

1115.84

1022

1632.81

1486.31

1114.59

1023

1628.69

1114.80

1030.95

In0.2Al0.8N

1021

378.81

335.17

308.89

1022

379.20

345.14

300.30

1023

403.60

346.10

300.28

In0.4Al0.6N

1021

439.44

403.11

313.53

1022

462.12

403.32

337.07

1023

480.89

402.52

313.33

  1. The \({\mu }_{T}\) (m2/kV-s) is electron mobility with suffix representing operating temperature in Kelvin,Nd is doping density (m−3) and piezoelectric scattering is taken into account.