Figure 6

Device characteristics of photodetectors prepared by flash evaporation. (a) I–V characteristics under 520 nm laser with different intensities. The inset shows the optical microscope image of the fabricated MAPbI3 photodetector. (b) Time-dependent photoresponse of the photodetector under few cycles of turn-on and off. (c) The I–V characteristics under light and dark conditions for the photodetectors prepared by the flash evaporated films at the different substrate locations.