Figure 3 | Scientific Reports

Figure 3

From: Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires

Figure 3

(a) Resistance switching behavior of the composite ReRAM embedded 1 wt% of the ST-CSWs. (b) Cumulative probability graphs of the SET and RESET voltages of the composite ReRAM device. (c) Endurance of the composite ReRAM device. (d) Result of the pulse switching test for the composite-based memory device with 1 wt% of ST-CSWs for 5,000 cycles. The SET and RESET pulse heights [duration] of 3.75 V [0.25 μs] and 1.65 V [0.25 μs], respectively. (e) Retention result of the composite ReRAM device at 358 K.

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