Figure 2 | Scientific Reports

Figure 2

From: Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

Figure 2

Bright-field TEM images of c-Si samples irradiated with (a)–(c) 6 MeV C60+, (d)–(f) 4 MeV C60+, (g,h) 1 MeV C60+, and (i) 200 MeV Xe14+ ions. All the samples were prepared by the pre-thinned configurations, except (c), (f), and (h) by the post-thinned configurations. Although both 200 MeV Xe14+ ions and 4 MeV C60 ions provide almost the same Se in c-Si, tracks were not observed in the former case, as shown in (i). While 4 and 6 MeV C60+ ions exhibit almost straight tracks (c,f), 1 MeV C60+ ions exhibit skewed tracks, which could indicate crossover from ion tracks to collision cascades.

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