Figure 3
From: Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
The energy dependence data of the track radii shown in Fig. 1a were plotted with the squared radius R2 versus electronic stopping power Se. The solid liens indicate the square root laws as shown by Eq. (2b). The high (open circles) and low (closed circles) energy data fall on the same law with different parameters. The thresholds and the prefactors fitted at high and low energy regions were denoted by Se,thH, CH, and Se,thL, CL, respectively. A data point of 200 MeV Xe ion is also indicated.
