Figure 4
From: Ion tracks in silicon formed by much lower energy deposition than the track formation threshold
(a) Ion energy dependence of the track length of C60 ions in c-Si is shown by closed circles. The line is the ion range estimated from the Eq. (5). (b) Depth dependence of the electronic energy loss Se for E = 1, 3, 4, and 6 MeV, calculated by Eq. (1) using SRIM 201315 (www.srim.org). The track lengths observed by XTEM are shown by rectangles with error bars.
