Table 6 A comparative study of proposed MTM with some recently published tunable MTMs.
References | Tuning mechanism | Frequency/wavelength shifting | Covering band | Other features |
---|---|---|---|---|
CoFeSi-based magnetic microwire biased with DC voltage | 0.2 GHZ | S-band | 1. 100 wires are used 2. Thickness of wire 33 µm 3. Shift of frequency is 0.5% 4. Tuned resonance frequency is around 3.5 GHz | |
Mercury based toroidal resonator tuned by temperature change | 7.2 MHz/°C | S-band | 1. Resonance frequency shifts to low frequency with increasing temperature 2. Linear shift noticed within 0–30 °C | |
Tunability based on coupling between two crossed split ring resonators arranged in different rotation angles | 2.5 GHz | C-band | 1. Dual band resonances within 5.5–8 GHz 2. 2.5 GHz variation obtained within rotation angle 30°–90° | |
The potential difference between p-type GaAs and n-type GaAs over the unit cell controls the resonances | – | 2–6 THz | 1. Semiconductor-based metamaterial 2. Resonance frequencies and their magnitude are tuned by controlling free electrons concentration of unit cell | |
Electrical tuning by varying gate voltage of CMOS compatible nanopillars based metamaterial | 240 nm | – | 1. Wavelength shifting obtained for voltage change from – 4 V to + 4 V 2. More than 40% differential reflection is experimentally observed 3. Phase modulation up to 270° is achieved by optimizing nanopillar heights | |
Proposed | Tunability based on changing the length of four metallic stubs extended from the center and placed between four symmetrical quartiles | 110 MHz 1.12 GHz 3.1 GHz | C-band X-band Ku-band | 1. Symmetrical split-ring resonators are used 2. Frequency shifts are more pronounced within 12–18 GHz and less within 4–8 GHz 3. Simultaneous change of four tuning stubs from 2.5 to 5 mm helps to adjust the resonance frequencies |