Figure 2
From: Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating
Gate dependence of the resistivity and ST-FMR signals of ultrathin Pt on Py. (a) Gate voltage VG dependences of Pt resistivity ρPt in three devices with different Pt thicknesses are displayed. All values in parentheses in the caption are in nm. The resistivity of Pt becomes greater as the thickness of Pt becomes smaller. The Pt resistivity decreased as a positive gate voltage was applied, which is due to charge accumulation by gating. (b) ST-FMR spectra of the Pt(1.2 nm)/Py(3 nm) device at gate voltages of 0 V (black closed circles) and 1.25 V (red closed circles). The frequency, f, was set to 6 GHz. Gate voltage dependence of (c) the symmetric component, S, (d) the anti-symmetric component, A and (e) spin-conversion efficiency, η.
