Figure 2

Characterization of the channel width and gold electrodes. (a–d) Optical microscopy of all the devices designed (C1-100 \(\mu\)m, C2 \(\mu\)m+res, C3 200 \(\mu\)m, and C4) 200 \(\mu\)m+ res. (e) Profilometry measurements showing the channel depth and width. The red line A–B corresponds to the line where the measurements were taken (f) Dependence of the trench width and trench depth with the lithography mask width.