Figure 1 | Scientific Reports

Figure 1

From: Hole doping effect of MoS2 via electron capture of He+ ion irradiation

Figure 1

(a) Diagram depicting the conversion of n-type MoS2 to p-type via the downward shifts of Fermi energy (EF) level and the increase in the work function (WF) from the electron capture of the He+ ion irradiation on the MoS2 surface (inset). (b,c) The negative binding energy shifts of Mo 3d, S 2p, and valence band photoemission spectra depend on the ion energy (b) and irradiation time (c) of He+ ion irradiation. (c) Symbol size indicates the increase of the ion energy from 0.1 eV (left) to 1.5 keV (right).

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